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APT6025BFLL APT6025SFLL
600V 24A 0.250
BFLL D3PAK
TO-247
POWER MOS 7
(R)
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SFLL
* Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT6025BFLL_SFLL UNIT Volts Amps
600 24 96 30 40 325 2.60 -55 to 150 300 24 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 0.250 250 1000 100 3 5
(VGS = 10V, ID = 12A)
Ohms A nA Volts
9-2004 050-7066 Rev B
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT6025BFLL_SFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 24A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 24A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 400V, VGS = 15V ID = 24A, RG = 5 ID = 24A, RG = 5 RG = 1.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
2910 535 55 65 15 34 18 19 30 18 280 110 420 140
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
24 96 1.3
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -24A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -24A, di/dt = 100A/s) Reverse Recovery Charge (IS = -24A, di/dt = 100A/s) Peak Recovery Current (IS = -24A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
15 250 525 2.34 5.22 12 17
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.38 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.40
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 4.51mH, RG = 25, Peak IL = 24A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID24A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35 0.30 0.25 0.20 0.15
0.9
0.7
0.5
Note:
PDM t1 t2
9-2004
0.3 0.10 0.05 0 10-5 0.1 0.05
JC
050-7066 Rev B
Z
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
Junction temp. (C) RC MODEL
80 70
ID, DRAIN CURRENT (AMPERES)
0.00401F
APT6025BFLL_SFLL
VGS =15 &10V 8V 7V 6.5 6V 5.5V 5V
0.0175
60 50 40 30 20 10 0
Power (watts)
0.143
0.00641F
0.219 Case temperature. (C)
0.158F
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 80 70
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
NORMALIZED TO = 10V @ I = 12A
D
1.30 1.20 1.10 1.00 0.90 0.80 VGS=10V
60 50 40 30 20 10 0 TJ = -55C 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS TJ = +125C TJ = +25C
VGS=20V
0
25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
10 20 30 40 50 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
20
1.10
15
1.05
10
1.00
5
0.95
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I V
D
0 25
0.90 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
= 12A = 10V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, RDS(ON) vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7066 Rev B
9-2004
96
ID, DRAIN CURRENT (AMPERES)
10,000
OPERATION HERE LIMITED BY RDS (ON)
APT6025BFLL_SFLL
Ciss
50
C, CAPACITANCE (pF)
1,000 Coss
100S 10
100 Crss
1
TC =+25C TJ =+150C SINGLE PULSE
1mS
1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
10mS
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 24A
200 100
12 VDS=120V 8 VDS=300V VDS=480V 4
TJ =+150C TJ =+25C 10
20 30 40 50 60 70 80 90 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 50 td(off)
V = 400V
0
0
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 60 50 40
V
DD G
= 400V
R
= 5
40
td(on) and td(off) (ns)
DD G
T = 125C
J
L = 100H
30
R
= 5
tr and tf (ns)
T = 125C
J
L = 100H
30 20
tf tr
20 td(on)
10
10 0
0
0
20 30 40 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10
20 30 40 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 900
V
DD
0
10
800 700
SWITCHING ENERGY (J)
= 400V
= 400V
R
= 5
800
SWITCHING ENERGY (J)
I
T = 125C
J
D J
= 24A
Eoff
600 500 400 300 200 100
L = 100H EON includes diode reverse recovery.
700 600 500 400 300 200 100
T = 125C L = 100H E ON includes diode reverse recovery.
Eon
Eon
050-7066 Rev B
9-2004
Eoff
20 25 30 35 40 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10
15
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
APT6025BFLL_SFLL
Gate Voltage
10 % td(on)
Drain Current
T = 125 C J
90% td(off)
Gate Voltage T = 125 C J
90% 5% tr 5%
Drain Voltage
Drain Voltage
90% tf 10%
Drain Current
10 %
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF60
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7066 Rev B
9-2004
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)

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